| PART |
Description |
Maker |
| IDT70824S IDT70824S20GB IDT70824S20GI IDT70824S25G |
TRANS NPN W/RES 80 HFE SMINI-3 4K X 16 STANDARD SRAM, 45 ns, PQFP80
HIGH-SPEED 4K X 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM 4K X 16 STANDARD SRAM, 25 ns, PQFP80
HIGH-SPEED 4K X 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM 高K的16顺序访问随机存取存储器（单存取RAM⑩）
HIGH-SPEED 4K X 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM?
|
SRAM
Integrated Device Technology, Inc.
|
| IDT70825L IDT70825L20G IDT70825L20GB IDT70825L20PF |
HIGH-SPEED 8K x 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM)
HIGH-SPEED 8K x 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM⑩)
|
IDT[Integrated Device Technology]
|
| 74LS189PC 74LS189FC 74LS189DC 54LS189FM 54LS189DM |
V(cc): 5.0V; 64-bit random access memory (with 3-state outputs)
64-BIT RANDOM ACCESS MEMORY(With 3-State Outputs)
|
Fairchild Semiconductor
ETC
Unknow
|
| MCM6706B MCM6706BJ10 MCM6706BJ10R MCM6706BJ12 MCM6 |
32K x 8 Bit Static Random Access Memory
|
Motorola, Inc.
MOTOROLA[Motorola, Inc]
|
| 74F219PC 74F219SJ 74F219 74F219SC 74F219CW 74F219S |
64-Bit Random Access Memory with 3-STATE Outputs
|
FAIRCHILD[Fairchild Semiconductor]
|
| K1S161611A-I DS_K1S161611A K1S161611A DSK1S161611A |
1Mx16 bit Uni-Transistor Random Access Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| MCM6729WJ12R2 MCM6729 MCM6729WJ10 MCM6729WJ10R2 MC |
256K x 4 Bit Fast Static Random Access Memory
|
Motorola, Inc.
MOTOROLA[Motorola, Inc]
|
| MCM6729BWJ8R MCM6729B MCM6729BWJ10 MCM6729BWJ10R M |
256K x 4 Bit Fast Static Random Access Memory
|
Motorola, Inc.
MOTOROLA[Motorola, Inc]
|
| HM5118165A HM5118165AJ-7 HM5118165AJ-8 HM5118165AT |
1048576-word x 16-bit Dynamic Random Access Memory
|
HITACHI[Hitachi Semiconductor]
|
| MCM6341 |
128K x 24 Bit Static Random Access Memory
From old datasheet system
|
Motorola
|
| AK58256AG AK58256AS |
262,144 x 8 bit CMOS Dynamic Random Access Memory
|
ACCUTEK MICROCIRCUIT CORPORATION
|
